Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-01-04
2005-01-04
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S50400H, C250S365000, C250S461100
Reexamination Certificate
active
06838684
ABSTRACT:
A lithographic projection apparatus for EUV lithography includes a foil trap. The foil trap forms an open structure after the EUV source to let the EUV radiation pass unhindered. The foil trap is configured to be rotatable around an optical axis. By rotating the foil trap, an impulse transverse to the direction of propagation of the EUV radiation can be transferred on debris present in the EUV beam. This debris will not pass the foil trap. In this way, the amount of debris on the optical components downstream of the foil trap is reduced.
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Bakker Levinus Pieter
Banine Vadim Yevgenyevich
Schuurmans Frank Jeroen Pieter
ASML Netherlands B.V.
Pillsbury & Winthrop LLP
Smith II Johnnie L
Wells Nikita
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