Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-01-02
2007-01-02
Letscher, Geraldine (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S322000, C430S270100, C430S323000, C430S324000
Reexamination Certificate
active
10375531
ABSTRACT:
The invention relates to a process for the production of photomasks. A film of a photoresist, as used for structuring semiconductor substrates, for example a CARL resist, is applied to a chromium-coated quartz glass substrate. The photoresist layer is written on by means of a focused electron beam, heated and then developed. The now structured resist is treated with an amplification agent and thus increases in its etch resistance to an oxygen plasma. During etching of the bare chromium sections, the silicon introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. Thus, the structure written in by means of the electron beam can be transferred without loss into the chromium layer.
REFERENCES:
patent: 5250375 (1993-10-01), Sebald et al.
patent: 6171755 (2001-01-01), Elian et al.
patent: 6251558 (2001-06-01), Elian et al.
patent: 2003/0013022 (2003-01-01), Czech et al.
patent: 0 492 253 (1992-07-01), None
patent: 0 874 281 (1998-10-01), None
patent: 0 919 867 (1999-06-01), None
Tadashi Arai et al.: “A Chemical-Amplification Positive-Resist Design For 0.18μm Reticle Fabrication Using The 50-kV HL-800M Electron Beam System”,Part of the SPIE Conference on Photomask and X-Ray Mask TechnologyV, Kawasaki, Japan, Apr. 1998, SPIE, vol. 3412, pp. 190-195.
Masa-aki Kurihara et al.: “Performance of a chemically amplified positive resist for next generation photomask fabrication”,Part of the SPIE Conference on Photomask and X-Ray Mask Technology V, Kawasaki, Japan, Apr. 1998, SPIE, vol. 3412, pp. 279-291.
Elian Klaus
Sebald Michael
Greenberg Laurence A.
Infineon - Technologies AG
Letscher Geraldine
Locher Ralph E.
Stemer Werner H.
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