Lithographic process for reducing the lateral chromium...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S322000, C430S270100, C430S323000, C430S324000

Reexamination Certificate

active

10375531

ABSTRACT:
The invention relates to a process for the production of photomasks. A film of a photoresist, as used for structuring semiconductor substrates, for example a CARL resist, is applied to a chromium-coated quartz glass substrate. The photoresist layer is written on by means of a focused electron beam, heated and then developed. The now structured resist is treated with an amplification agent and thus increases in its etch resistance to an oxygen plasma. During etching of the bare chromium sections, the silicon introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. Thus, the structure written in by means of the electron beam can be transferred without loss into the chromium layer.

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Tadashi Arai et al.: “A Chemical-Amplification Positive-Resist Design For 0.18μm Reticle Fabrication Using The 50-kV HL-800M Electron Beam System”,Part of the SPIE Conference on Photomask and X-Ray Mask TechnologyV, Kawasaki, Japan, Apr. 1998, SPIE, vol. 3412, pp. 190-195.
Masa-aki Kurihara et al.: “Performance of a chemically amplified positive resist for next generation photomask fabrication”,Part of the SPIE Conference on Photomask and X-Ray Mask Technology V, Kawasaki, Japan, Apr. 1998, SPIE, vol. 3412, pp. 279-291.

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