Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1998-07-08
2000-12-26
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430905, 430910, G03F 7004
Patent
active
06165678&
ABSTRACT:
A novel radiation-sensitive lithographic photoresist composition is provided which has improved sensitivity and resolution. The composition comprises a photosensitive acid generator and an acrylate or methacrylate copolymer. The copolymer contains first monomeric units having polar pendant groups and second monomeric units containing photoacid-cleavable ester groups. The polar pendant groups preferably comprise C.sub.6 -C.sub.12 alicyclic substituents containing a polar moiety R*, wherein the alicyclic substituents are bound through a linker moiety to the polymer backbone. Other monomeric units may be included as well. A process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.
REFERENCES:
patent: 5071730 (1991-12-01), Allen et al.
patent: 5399647 (1995-03-01), Nozaki
patent: 5585219 (1996-12-01), Kaimoto et al.
patent: 5910392 (1999-06-01), Nozaki et al.
patent: 5968713 (1999-10-01), Nozaki et al.
Abe et al. (1995), "Study of ArF Resistance Material in Terms of Transparency and Dry Etch Resistance," J. Photopolym. Sci. and Tech. 8(4):637-642.
Allen et al. (1995), "Resolution and Etch Resistance of a Family of 193 nm Positive Resists," J. Photopolym. Sci. and Tech. 8(4):623-636.
Nozaki et al. (1993), J. Photopolym. Sci. Technol. 9:509-522.
Allen Robert David
DiPietro Richard Anthony
Sooriyakumaran Ratnam
Wallow Thomas I.
Wallraff Gregory Michael
Chu John S.
International Business Machines - Corporation
Reed Dianne E.
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