Lithographic method using double exposure techniques, mask posit

Details Lithographic method using double exposure techniques, mask posit Lithographic method using double exposure techniques, mask posit

1992-07-31

1994-05-03

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

428156, 430 5, 430 22, 430269, 430311, 430396, G03C 500

Patent

active

053087410

ABSTRACT:
A lithographic method using double exposures, physical mask shifting, and light phase shifting is used to form masking features on a substrate masking layer. A first phase shifting mask (11) is placed in a first position adjacent a substrate (10). The substrate (10) is covered by the masking layer. The masking layer is exposed to light, or an equivalent energy source, through the first mask (11) to form a first plurality of unexposed regions of the masking layer. Either a second mask or the first mask (11) is placed adjacent the substrate (10) in a second position which is displaced from the first position in an X direction, a Y direction, and/or a rotational direction. A second exposure is used to form a second plurality of unexposed regions of the masking layer. The first and second pluralities of unexposed regions have common unexposed regions which are used to form the masking features.

REFERENCES:
patent: 4591540 (1986-05-01), Bohlen et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5153083 (1992-10-01), Garofalo et al.
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5194345 (1993-03-01), Rolfson
patent: 5194346 (1993-03-01), Rolfson et al.
"Improving Resolution in Photolithography with a Phase-Shifting Mask," by Levensen et al., was published in IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.
"Sub-Quarter Micron Gate Fabrication Process Using Phase-Shifting-Mask for Microwave GaAs Devices" by Inokuchi et al., publ. in Ext. Abs. of '91 Int. Conf. on S. S. Dev. & Mat., Yoko., pp. 92-94.

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