Lithographic apparatus, device manufacturing methods,...

Details Lithographic apparatus, device manufacturing methods,... Lithographic apparatus, device manufacturing methods,...

2006-01-10

2006-01-10

Nguyen, Henry Hung (Department: 2851)

Photocopying

Projection printing and copying cameras

Illumination systems or details

C355S067000, C430S005000

Reexamination Certificate

active

06985211

ABSTRACT:
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack provided selectively to compensate for figure errors in the base multilayer stack or the substrate on which the multilayer stack is provided. A reflective mask for EUV uses two multilayer stacks, one introducing a relative phase shift and/or altered reflectivity with respect to the other one.

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European Search Report for Application No. 01 30 4452.4, dated Nov. 29, 2001.
XP-002183158, neha Choksi et al., “Maskless Extreme Ultraviolet Lithography,” J. Vac. Sci. Technol. B 17(6), Nov./Dec. 1999, pp. 3047-3051.

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