Lithographic apparatus and device manufacturing method

Details Lithographic apparatus and device manufacturing method Lithographic apparatus and device manufacturing method

2005-10-11

2005-10-11

Rutledge, D. (Department: 2851)

Photocopying

Projection printing and copying cameras

Illumination systems or details

C355S053000, C355S071000, C428S141000, C428S408000, C428S469000, C427S162000, C427S402000, C427S595000, C378S084000, C250S505100, C359S350000

Reexamination Certificate

active

06954257

ABSTRACT:
An optical element of a lithographic projection apparatus includes a Si/Mo multilayer structure, an outer capping layer and an interlayer positioned between the multilayer structure and the outer capping layer. The interlayer has a thickness of between 0.3 and 0.7 times the wavelength of the incident radiation. The interlayer may be C or Mo and has a thickness of between 6.0 and 9.0 nm. The interlayer may include an inner interlayer including Mo next to the multilayer structure and an outer interlayer including C next to the capping layer. The outer interlayer is at least 3.4 nm thick and the capping layer is Ru and at least 2.0 nm thick.

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Singh et al., “Capping layers for extreme-ultraviolet multilayer interference coatings,”Optics Letters26(5):259-261 (2001).
Larruquert, “Sub-quarterwave multilayers with enhanced reflectance at 13.4 and 11.3 nm,”Optics Communications206:259-273 (2002).
Data Accession No. 7309833, Bajt et al., “Improved reflectance and stability of Mo/Si multilayers,”The Institutioin of Electrical Engineers, Stevenage, (2001), XP 002219428.

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