Liquid source formation of thin films using hexamethyl-disilazan

Details Liquid source formation of thin films using hexamethyl-disilazan Liquid source formation of thin films using hexamethyl-disilazan

1996-09-16

1998-12-01

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 4272481, 427226, 427252, B05D 512

Patent

active

058435166

ABSTRACT:
A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

REFERENCES:
patent: 5250322 (1993-10-01), Takahashi et al.
patent: 5316579 (1994-05-01), McMillan et al.
patent: 5423285 (1995-06-01), Paz de Araujo et al.
patent: 5456945 (1995-10-01), McMillan et al.
patent: 5612082 (1997-03-01), Azuma et al.

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