Liquid source formation of thin films using hexamethyl-disilazan

Details Liquid source formation of thin films using hexamethyl-disilazan Liquid source formation of thin films using hexamethyl-disilazan

1997-06-16

1998-12-15

Brunsman, David

Compositions: coating or plastic

Coating or plastic compositions

Silicon containing other than solely as silicon dioxide or...

C09D 712, C09K 1532

Patent

active

058490710

ABSTRACT:
A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a solvent such as xylenes/methyl ethyl ketone and a small amount of hexamethyl-disilazane. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.

REFERENCES:
patent: 5423285 (1995-06-01), Paz De Araujo et al.
patent: 5429673 (1995-07-01), Peterson et al.
patent: 5456945 (1995-10-01), McMillian et al.

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