Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1991-08-30
1994-08-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
437 92, 437117, 437119, 437120, 437122, C30B 1906
Patent
active
053342780
ABSTRACT:
The liquid-phase epitaxy system having the LPE boat consists of of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by the proper temperature profile, since the solution for melt-etch and the remaining solution for the epitaxial growth are not filled into the contacting wells at the same time.
Thus, the present invention can easily perform the in-situ melt-etch and can improve the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.
REFERENCES:
patent: 3890194 (1975-06-01), Ettenberg
patent: 3960618 (1976-06-01), Kawamura et al.
patent: 4110133 (1978-08-01), Garrett et al.
patent: 4404730 (1983-09-01), Heimen
patent: 4470368 (1984-09-01), Reynolds et al.
patent: 4547230 (1985-10-01), Hawrylo
Kunemund Robert
Samsung Electronics Co,. Ltd.
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