Liquid-phase-epitaxy deposition method in the manufacture of dev

Details Liquid-phase-epitaxy deposition method in the manufacture of dev Liquid-phase-epitaxy deposition method in the manufacture of dev

1987-06-15

1989-03-07

Dixon, Jr., William R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG107, 437 91, 437 92, 437135, H01L 2120

Patent

active

048103250

ABSTRACT:
Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxide, enhanced yield is realized as believed to be due to reduced adhesion of solidifying material entrained upon withdrawal of a substrate after growth. The method is particularly useful in the manufacture of magnetic domain devices designed to operate at extreme temperatures, as well as in the manufacture of magneto-optic devices such as, e.g., switches, modulators, and isolators.

REFERENCES:
patent: 3790405 (1974-02-01), Levinstein
patent: 4400445 (1983-08-01), Berkstresser et al.
patent: 4419417 (1983-12-01), LeCraw et al.
patent: 4544438 (1985-10-01), Luther et al.

Affiliated with

Also associated with

Rating

Liquid-phase-epitaxy deposition method in the manufacture of dev does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid-phase-epitaxy deposition method in the manufacture of dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid-phase-epitaxy deposition method in the manufacture of dev will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1666323