Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-02-19
1989-05-09
Pal, Asok
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156607, 156609, 156611, 156612, H01L 21208
Patent
active
048286486
ABSTRACT:
An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the interior of the apparatus and for forming a gas impermeable seal between the apparatus and the cover. The apparatus also contains a leveling apparatus, a gas flushing apparatus, and an apparatus for the in situ doping/quench annealing of HgCdTe epitaxial films. The leveling apparatus comprising channels and leveling balls that travel therein which align themselves between scribe marks when the apparatus is in a level position. The gas flushing apparatus is comprised of a gaseous purge ball valve that opens and seals a flushing channel that lead from the interior of the invention to the external environment. The in situ doping/quench annealing apparatus is accomplished via a stabilized chamber ball valve which operates independently with respect to the gaseous purge ball valve, thereby allowing in situ doping leveling without effecting the atmospheric integrity of the vessel.
REFERENCES:
patent: 3811963 (1974-05-01), Hawrylo et al.
patent: 4357620 (1982-11-01), Wang et al.
patent: 4366771 (1983-01-01), Bowers et al.
patent: 4755364 (1988-07-01), La Chapelle et al.
Bardsley et al., "Crystal Growth", (1977) pp. 226-229.
Schneider et al., "Advances in Epitaxy and Endotaxy" (1976), pp. 236-245.
Growth, Properties and Applications of HgCdTe, J. L. Schmit Journal of Crystal Growth 65 (1983) 249-261.
Liquid Phase Growth of HgCdTe Epitaxial Layers, C. C. Wang et al., Journal of the Electromechanical Society, vol. 27, No. 1, Jun. 1980, 175-179.
La Chapelle, Jr. Theodore J.
Weismuller Thomas P.
Hamann H. Fredrick
Kirk James F.
Montanye George A.
Pal Asok
Rockwell International Corporation
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