Liquid phase epitaxial growth with interfacial temperature diffe

Details Liquid phase epitaxial growth with interfacial temperature diffe Liquid phase epitaxial growth with interfacial temperature diffe

1975-04-04

1977-10-04

Yudkoff, Norman

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576E, 148171, 148172, 156624, 252 623GA, 427 87, B01J 1704, H01L 21208

Patent

active

040522520

ABSTRACT:
A thin layer of semiconductor material with an extremely smooth surface can be grown on a substrate by liquid phase epitaxy. When the growing solution contacts the surface of the substrate, the substrate is at a lower temperature than the solution. The temperature difference should be less than 1.degree. C and depends upon the desired degree of smoothness. Both the substrate and the solution are then cooled to permit deposition of the layer.

REFERENCES:
patent: 3783825 (1974-01-01), Kobayasi et al.
patent: 3897281 (1975-07-01), Gilbert et al.
patent: 3909317 (1975-09-01), Itoh et al.
patent: 3925117 (1975-12-01), Stone et al.
IBM Technical Disclosure Bulletin, vol. 13, No. 11, p. 3221, Apr. 1971.

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