Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Patent
1997-09-02
1999-12-07
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
438604, 438606, 438500, 438497, 438762, 438779, 438787, 438905, 438906, 438933, 438930, H01L 218252
Patent
active
059983043
ABSTRACT:
A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30.degree. C.-50.degree. C.) on a III-V semiconductor, such as a gallium arsenide substrate. The silicon dioxide film may be used in a bipolar transistor or as a field oxide of MOS (metal oxide semiconductor). The III-V semiconductor substrate is chemically treated with an alkaline aqueous solution such as ammonium hydroxide so that the surface of the III-V semiconductor substrate is modified to facilitate the growth of the silicon dioxide film by liquid phase deposition. The growth rate of the silicon dioxide film is as fast as 1265 .ANG./hr. The silicon dioxide film has a refractive index ranging between 1.372 and 1.41.
REFERENCES:
patent: 5326720 (1994-07-01), Goda et al.
patent: 5378960 (1995-01-01), Tasker et al.
patent: 5516721 (1996-05-01), Galli et al.
patent: 5650361 (1997-07-01), Radhakrishnan
Houng Mau-Phon
Huang Chien-Jung
Wang Yeong-Her
Bowers Charles
National Science Council
Nguyen Thanh
LandOfFree
Liquid phase deposition method for growing silicon dioxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Liquid phase deposition method for growing silicon dioxide film , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid phase deposition method for growing silicon dioxide film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-823371