Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-10-30
1999-12-21
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438778, 438787, 438782, H01L 2131, H01L 21469
Patent
active
060048867
ABSTRACT:
A method for growing a silicon dioxide film on a HgCdTe substrate includes a first step in which the HgCdTe substrate is cleaned with an alkaline aqueous solution. The cleaned HgCdTe substrate is then dried before being immersed in a liquid phase deposition solution in which the silicon dioxide film is deposited on the surface of the HgCdTe substrate at the rate as high as 1672 .ANG./hr. The silicon dioxide film has a refraction rate as high as 1.465.
REFERENCES:
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Homma, T. et al. A New Interlayer Formation Technology for Completely Planarized Multilevel Interconnection by Using LPD. 1990 Symposium on VLSI Technology. pp. 3-4, Jun. 1990.
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Houng Mau-Phon
Wang Na-Fu
Wang Yeong-Her
Chaudhuri Olik
National Science Council
Peralta Ginette
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