Liquid immersion heating process for substrate temperature unifo

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Including heating

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430311, 427532, G03F 726

Patent

active

057167630

ABSTRACT:
A temperature-sensitive film such as a resist is baked onto a semiconductor substrate such as a mask blank by immersion in a heated liquid. A barrier coating may optionally be applied to the substrate prior to immersion and later removed. The substrate is subsequently cooled by immersing the substrate in a cooling liquid or dissolving the heated liquid from the substrate with a rinsing liquid at a temperature sufficiently lower than that of the heated liquid. Temperature uniformity within .+-.0.2.degree. C. is thereby achieved across the regions of varying thickness in the silicon wafer and membrane. Where a resist has been deposited on the mask blank substrate, heating and cooling by immersion results in improved line size control after exposure and development down to 0.25 .mu.m.

REFERENCES:
patent: 5413965 (1995-05-01), Webb
Chen et al., "Study and Verification of Thermal Bake Chuck Models", SRC/SCoE Review (Oct. 13, 1993).
Kaplan & Zimmerman, "Hotplate for Photoresist Baking", IBM Technical Disclosure Bulletin, 21 (Jun. 1978).

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