Liquid etchant composition for thin film resistor element

Details Liquid etchant composition for thin film resistor element Liquid etchant composition for thin film resistor element

1991-11-21

1993-10-26

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156662, 252 793, C23F 100

Patent

active

052562476

ABSTRACT:
A resistor material having at least chromium, silicon and oxygen, Cr.SiO.sub.2, contained in electronic integrated circuits, particularly in the case of an aluminum layer being on the material, is etched with a liquid etchant composition containing 1.92 to 2.64 mol/l of hydrochloric acid, 0.26 to 0.77 mol/l of phosphoric acid, 5 to 10 mol/l hydrofluoric acid and 3.2 to 5.4 mol/l of ammonium fluoride.

REFERENCES:
patent: 3524817 (1970-08-01), Roy et al.
patent: 4370197 (1983-01-01), Abolafia et al.
patent: 4477364 (1984-10-01), Garcia
patent: 4588471 (1986-05-01), Griffith et al.
patent: 4970014 (1990-11-01), Garcia
patent: 5091053 (1992-02-01), Blonder et al.

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