Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2007-06-19
2007-06-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C438S795000, C257SE21476
Reexamination Certificate
active
10827711
ABSTRACT:
The invention drastically improves the accuracy of adhesion position of a liquid drop discharged by a liquid drop discharge method and makes it possible to form a fine and highly accurate pattern directly on a substrate. Therefore, one object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can respond to upsizing of a substrate. Moreover, another object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can improve throughput and the efficiency of use of material. The invention can improve the accuracy of adhesion position of a liquid drop drastically at the time of patterning a resist material, a wiring material, or the like directly by the liquid drop discharge method mainly on a substrate having an insulating surface. To be more specific, the invention is characterized in that: a liquid adhesion position on the surface of the substrate is scanned with a charged beam in accordance with a desired pattern immediately before a liquid drop is discharged by the liquid drop discharge method; and immediately thereafter, the liquid drop is charged with an electric charge of a polarity opposite to the charged beam and is discharged to improve the controllability of the adhesion position of the liquid drop to a great extent.
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Imai Keitaro
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Lebentritt Michael
Lee Cheung
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