Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Patent
1997-11-06
1999-06-01
Sikes, William L.
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
257 59, 257347, G02F 1136
Patent
active
059092637
ABSTRACT:
An array structure for preventing an open ITO defect includes an amorphous silicon layer, and a high-doped amorphous silicon layer formed above the amorphous silicon layer, and a drain electrode formed above the doped amorphous silicon layer, completely enclosing the amorphous silicon layer and the doped amorphous silicon layer.
REFERENCES:
patent: 5668379 (1997-09-01), Ono et al.
Hollingshead Robert J.
Samsung Electronics Co,. Ltd.
Sikes William L.
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