Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-10-13
2000-10-10
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257347, 257348, 257349, 257350, 257351, 257352, 257353, 257 72, H01L 2900
Patent
active
061304433
ABSTRACT:
A liquid crystal display has wires made of aluminum alloy layer, and two molybdenum-tungsten alloy layers MoW located on/under the aluminum alloy layer, respectively. To form a wire, the first molybdenum-tungsten alloy layer, the aluminum alloy layer, and the second molybdenum-tungsten alloy layer are sequentially deposited. The molybdenum-tungsten alloy layer has different etch rates for one etchant, depending on the deposition temperature and tungsten content ratio. Particularly, since the molybdenum-tungsten alloy layer has an etch rate similar to that of an aluminum layer and aluminum alloy layer for an aluminum etchant CH.sub.3 COOH/HNO.sub.3 /H.sub.3 PO.sub.4 /H.sub.2 O. Therefore, the first molybdenum-tungsten alloy layer having a lower etch rate than that of the aluminum layer or the aluminum alloy layer, and the second molybdenum-tungsten alloy layer having a higher etch rate than that of the aluminum layer or the aluminum alloy layer may be formed by adjusting deposition temperature and tungsten content ratio. Accordingly, the wires have a gradually sloped taper angle.
REFERENCES:
patent: 5539551 (1996-07-01), Nomoto et al.
patent: 5942767 (1999-08-01), Na et al.
Hong Mun-Pyo
Tak Young-Jae
Abraham Fetsum
Samsung Electronics Co,. Ltd.
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