Liquid crystal display for preventing galvanic phenomenon

Details Liquid crystal display for preventing galvanic phenomenon Liquid crystal display for preventing galvanic phenomenon

2005-03-15

2005-03-15

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S722000

Reexamination Certificate

active

06867076

ABSTRACT:
A thin film transistor having a source/drain electrode on an insulating substrate is provided with a metal oxide layer interposed between a source/drain electrode and a metal connecting line. The formation of the metal oxide layer prevents the occurrence of the galvanic phenomenon.

REFERENCES:
patent: 5422921 (1995-06-01), Chiba
patent: 5434439 (1995-07-01), Ajika et al.
patent: 5847410 (1998-12-01), Nakajima
patent: 8-062628 (1996-03-01), None
patent: 9-203911 (1997-08-01), None

Affiliated with

Also associated with

Rating

Liquid crystal display for preventing galvanic phenomenon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid crystal display for preventing galvanic phenomenon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid crystal display for preventing galvanic phenomenon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3440831