Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-21
1997-09-02
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 42, 349142, H01L 2904, H01L 31036
Patent
active
056635753
ABSTRACT:
A liquid crystal display is provided with a high aperture ratio which solves the disadvantages of crossover short and limited viewing angle by using a transparent conductive electrode as a lower electrode of a gate line and a storage capacitor. The transparent conductive electrode has a plurality of sections removed so as to form a ladder or mesh structure. An anodic oxidative metal is deposited on the whole surface of the transparent conductive film after forming a gate electrode, thus making the whole surface of the transparent conductive film anodized. The thin film transistors of the LCD have a uniform surface.
REFERENCES:
patent: 5446562 (1995-08-01), Sato
Jang In-sik
Yamamura Nobuyuki
Samsung Electronics Co,. Ltd.
Tran Minh-Loan
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