Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-07-26
1999-03-02
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, H01L 2904, H01L 31036
Patent
active
058775129
ABSTRACT:
A liquid crystal display device according to the present invention includes pixels having uniform parasitic capacitance values. Each pixel comprises at least one thin film transistor. The gate electrode of the thin film transistor is formed from part of a gate line, so as to reduce the overall area occupied by the transistor. A drain electrode is formed over and within the width of the gate line and parallel to the source electrode, and having a surface area less than the underlying portion of the gate line. In addition, the source electrode and the drain electrode are isolated, but electrically connected to a semiconductor layer, from the gate electrode. A drain electrode extension is connected with the drain electrode and a pixel electrode, and projects outward over both width edges of the gate line. The drain electrode and drain electrode extension are dimensioned with sufficient margins with respect to the gate line to account for misalignments between the drain electrode and the gate line. In this way, the difference in pixel brightness due to differences in parasitic capacitance is removed by eliminating the possibility of alignment errors from varying the parasitic capacitance between pixels. Moreover, the area which the thin film transistor occupies is respectively widened compared with the prior art and the number of corrections to be made on each wiring layer is decreased because the cross steps of the gate electrode and the source electrode that occur on the underlying layer are reduced.
REFERENCES:
patent: 5049952 (1991-09-01), Choi
English translation of claim 1 of Korean document No. 94-6989 cited above.
Loke Steven H.
Samsung Electronics Co,. Ltd.
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