Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-29
2008-10-14
Tran, Thien F (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S164000
Reexamination Certificate
active
07435631
ABSTRACT:
An LCD and a method of manufacturing the same using at most six mask processes are provided. An active layer and a storage electrode are simultaneously formed by diffraction exposure. Multiple ion implantations are performed using a photoresist or the gate electrode to mask different areas of an underlying semiconductor. Source and drain electrodes and a pixel electrode are simultaneously formed by diffraction exposure. First and second connection electrodes that lower the contact resistance between the drain electrode and the active layer are formed by a lift-off process.
REFERENCES:
patent: 6617203 (2003-09-01), Kim et al.
Brinks Hofer Gilson & Lione
LG Display Co. Ltd.
Tran Thien F
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