Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reissue Patent
2008-01-22
2008-01-22
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S718000, C438S719000, C438S720000, C438S725000, C257S059000, C257S247000
Reissue Patent
active
RE040028
ABSTRACT:
The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating layer, first and second semiconductor layers, and a metal layer; b) applying a first photoresist on the metal layer; c) aligning a first photo mask with the substrate; d) light exposing and developing the first photoresist to produce a first photoresist pattern; e) etching the metal layer using a first etchant, the first etchant ashing the first photoresist pattern on a predetermined portion of the metal layer to produce a second photoresist pattern, thereby exposing the predetermined portion of the metal layer; and f) etching the gate insulating layer, the first and second semiconductor layer, and the predetermined portion of the metal layer using a second etchant according to the second photoresist pattern to form source and drain electrodes, an ohmic contact layer, and an active area; a third photolithography process forming a passivation film and a contact hole; and a fourth photolithography process forming a pixel electrode connecting with the drain electrode through the contact hole.
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Han Changwook
Hwang Kwangjo
Deo Duy-Vu N.
LG. Philips LCD Co. Ltd.
McKenna Long & Aldridge LLP
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