Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-13
2009-11-17
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S088000, C257S443000, C257SE33071, C257SE33073, C438S029000, C438S030000, C349S062000, C349S193000
Reexamination Certificate
active
07619286
ABSTRACT:
A poly-silicon liquid crystal display device with an improved aperture ratio and a simplified method of fabricating the same are disclosed. A liquid crystal display device according to the present invention includes first and second substrates; a gate line on the first substrate; a data line crossing the gate line to define a pixel region; a thin film transistor (TFT) near the crossing of the gate and data lines, the TFT having a gate electrode, a source electrode and a drain electrode; a pixel electrode in the pixel region, the pixel electrode having a double-layer structure in which a metal layer is formed on a transparent conductive layer; a black matrix on the second substrate, the black matrix having an aperture portion partially overlapping the pixel electrode and the drain electrode; and a liquid crystal layer between the first and second substrates.
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Garcia Joannie A
LG Display Co. Ltd.
McKenna Long & Aldridge
Richards N Drew
LandOfFree
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