Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-29
2009-06-23
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S149000
Reexamination Certificate
active
07550767
ABSTRACT:
A method for fabricating an LCD device includes forming sequentially a first conductive layer, a first insulation layer, a semiconductor layer, and an ohmic contact layer on a first substrate; forming a gate line by patterning the first conductive layer, the first insulation layer, the semiconductor layer, and the ohmic contact layer; exposing a first gate pad electrode connected with the gate line; insulating the gate line; forming a data line that intersects the gate line, wherein an electrode part is formed extending from the data line such that the electrode part is formed over the semiconductor layer and the ohmic layer, and defines an active pattern; forming a transparent electrode layer on the substrate including the electrode part; and forming source, drain, and pixel electrodes simultaneously by patterning at least one of the transparent electrode layer, the electrode part, and the ohmic contact layer.
REFERENCES:
patent: 6081308 (2000-06-01), Jeong et al.
patent: 2005/0285102 (2005-12-01), Koo et al.
patent: 2007/0178710 (2007-08-01), Muyres et al.
Lee Jung-Il
Yang Joon-Young
Le Thao X
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
Trice Kimberly
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