Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-19
2011-04-19
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S151000, C257S072000, C257SE29290, C257SE29293
Reexamination Certificate
active
07927931
ABSTRACT:
A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.
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Wolf, et al., “Silicon Processing for the VLSI Era, vol. 1—Process Technology”, Lattice Press, second edition, 2000, pp. 686-688.
Kim Soopool
Oh Jae Young
Yang Joon Young
Lebentritt Michael S
LG Display Co. Ltd.
McKenna, Long and Aldridge, LLP.
Whalen Daniel
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