Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-07-29
2008-07-29
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S659000, C257SE27131, C349S043000, C349S059000
Reexamination Certificate
active
11285464
ABSTRACT:
A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a shielding electrode electrically isolated from the data line, covering the data line at least in part, and having an aperture exposing the data line.
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Lee Baek-Woon
Oh Joon-Hak
Song Keun-Kyu
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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