Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-06-06
1999-09-14
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
349153, 349154, 349155, 349156, 349157, 349190, 257 59, 257 72, G02F 113
Patent
active
059526769
ABSTRACT:
An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
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Aoyagi Osamu
Isigaki Chizuru
Kobayashi Ippei
Konuma Toshimitsu
Odaka Seiichi
Abraham Fetsum
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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