Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-03-22
2011-03-22
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C257SE21568
Reexamination Certificate
active
07910456
ABSTRACT:
An embodiment of a composite substrate member in accordance with the present invention has a handle substrate member derived from a plurality of nanoparticles in a fluid mixture, and a thickness of material transferred to the handle substrate member. The handle substrate member may be formed from a plurality of liquid layers, for example a thinner surface layer conveying specific properties to the donor/substrate interface, and a thicker support layer dispensed over the surface layer.
REFERENCES:
patent: 7351644 (2008-04-01), Henley
patent: 7670930 (2010-03-01), Tauzin et al.
patent: 2003/0203547 (2003-10-01), Sakaguchi et al.
B.N. Mukashev et al.,Hydrogen Implantation into Silicon: Infra-Red Absorption Spectra and Electrical Properties, Institute of High Energy Physics, Academy of Sciences of the Kazakh SSR, Alma-Ata1; 91, 509 (1985).
Ghyka Alexander G
Kilpatrick Townsend and Stockton LLP
Nikmanesh Seahvosh J
Silicon Genesis Corporation
LandOfFree
Liquid based substrate method and structure for layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Liquid based substrate method and structure for layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid based substrate method and structure for layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2714407