Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1984-05-29
1986-05-27
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330296, 330297, H03F 316, H03F 360
Patent
active
045918031
ABSTRACT:
The present invention relates to an FET power amplifier whose transfer characteristics are parabolic or have a pronounced parabolic region. The amplifier is capable of linear operation due to a drain electrode bias network which includes a pair of serially connected quarter-wave transmission line sections connected at one end thereof to the drain electrode, and the interconnection point of the two quarter-wave transmission line sections is connected to both (a) a bias supply which causes the FET to operate over at least a portion of the parabolic region and (b) to a means which prevents envelope-induced drain bias voltage variations and presents a short-circuit to the drain terminal at a second harmonic of the input signal.
REFERENCES:
patent: 4110700 (1978-08-01), Rosen et al.
patent: 4342967 (1982-08-01), Regan et al.
Goel, "A 4-8 GHz Dual Gate M.E.S.F.E.T. Amplifier" Electronics Letters, vol. 14, No. 6, Mar. 16, 1978, pp. 167,168.
Yokouchi et al., "4 GHz 3 Watts FET Amplifier for Digital Transmission", Conference: 1978 IEEE MTT-S International Microwave Symposium, Ottawa Canada, Jun. 27-29, 1978, pp. 276-278.
"Five Basic Bias Designs for GaAs FET Amplifiers", Microwaves, Feb. 1978.
"Improving the Power-Added Efficiency of FET Amplifiers Operating with Varying-Envelope Signals", IEEE Transactions on Microwave Theory and Techniques, vol. 31, No. 1, Jan. 1983, pp. 51-56, Saleh et al.
Saleh et al., "Adaptive Linearization of Power Amplifiers in Digital Radio Systems", Bell System Technical Journal, vol. 62, No. 4, Apr. 1983, pp. 1019-1033.
AT&T Bell Laboratories
Mullins James B.
Pfeifle Erwin W.
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