Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-22
2008-07-22
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S685000, C438S687000, C257SE21579
Reexamination Certificate
active
07402514
ABSTRACT:
An embodiment of the instant invention is a method of providing a connection between a first conductor and a second conductor wherein the first conductor is situated under the second conductor and separated by a first insulating layer, the method comprising the steps of: forming an opening in the first insulating layer (layer124or128of FIGS.1-4), the opening having a top, a bottom and sidewalls and is situated between the first conductor and the second conductor; forming a second insulating layer (layer134, 138, and142of FIGS.3and4) exclusively on the sidewalls of the opening thereby leaving a smaller opening in the first insulating layer; forming a conductive material (material140of FIGS.3and4) in the smaller opening; and wherein the first insulating layer is comprised of a low-k material and the second insulating layer is comprised of an insulator which has electrical leakage properties which are less than the electrical leakage properties of the first insulating layer.
REFERENCES:
patent: 5604156 (1997-02-01), Chung et al.
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6197688 (2001-03-01), Simpson
patent: 0795895 (1997-09-01), None
Tsu, “Leakage and Breakdown Reliability Issues Associated with Low-k Dielectrics In a Dual-Damascene Cu Process”, Int'l Rel. Phys. Sym. Proc. (IEEE, 2000), pp. 348-352.
Bonifield Thomas
McKee William R.
McPherson Joe W.
Tsu Robert
Brady III Wade J.
Ghyka Alexander G
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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