Line photo masks and methods of forming semiconductor...

Details Line photo masks and methods of forming semiconductor... Line photo masks and methods of forming semiconductor...

2004-12-27

2008-09-16

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S322000

Reexamination Certificate

active

07425389

ABSTRACT:
According to various embodiments of the invention, there are provided line photo masks having a plurality of line patterns. These masks, which are suitable for preventing electric shorts between the data line images, are disposed on the semiconductor substrate by transferring them, which have the plurality of line patterns, onto a photoresist layer. One of the line patterns has at least one trench pattern.

REFERENCES:
patent: 5807649 (1998-09-01), Liebmann et al.
patent: 6339239 (2002-01-01), Alsmeier et al.
patent: 2005/0255387 (2005-11-01), Butt et al.
patent: 2000-208609 (2000-07-01), None
patent: 2003-36111 (2003-05-01), None
English language abstract of Japanese Publication No. 2003-36111, May 9, 2003.
English language abstract of Japanese Publication No. 2000-208609, Jul. 28, 2000.

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