Line memory in which reading of a preceding line from a...

Television – Image signal processing circuitry specific to television – With details of static storage device

Reexamination Certificate

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Details

C348S719000, C365S189040

Reexamination Certificate

active

06717624

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a line memory, and more particularly to a line memory which is used when signal processing is performed, for example, in a television set (TV) or a video tape recorder (VTR) by using a correlation between a current line and a preceding line.
2. Description of Related Art
A line memory is used in a signal processing in which a correlation between a current line and a preceding line is, for example, used to demultiplex a digitized composite video signal to a luminance signal and color signals (this is called YC demultiplexing) in TV or VTR.
In case of National Television System Committee (NTSC) system and a signal processing frequency of 4 fsc (about 14.3 MHz. Hereinafter called a clock CLK. fsc: color sub-carrier frequency, 1 fsc=3.579545 MHz), a memory capacity required for a line memory is 910 words (1 word=8 bits) in an example case where a resolution of 1 dot is 8 bits and the number of dots in one line is 910 dots.
FIG. 8
is a block diagram showing the configuration of a conventional line memory.
In
FIG. 8
,
50
indicates a memory, having a capacity of 910 words (1 word=8 bits), for storing a line of dot data LDT.
51
indicates a read/write address counter operated according to a clock (8 fsc. Hereinafter called a double clock 2CLK) having a frequency which is double of the clock CLK (4 fsc).
52
indicates a read/write control unit for producing an address signal
63
, a read enable signal
62
and a write enable signal
64
according to a read/write address signal
61
output from the read/write address counter
51
and controlling a data reading-out from the memory
50
and a data writing-in to the memory
50
.
53
indicates a write register for delaying dot data LDT of a current line by one time-period of the double clock 2CLK and outputting the delayed dot data LDT as write register data
65
.
54
indicates a read register for delaying dot data of a preceding line read out from the memory
50
by one time-period of the double clock 2CLK and outputting the delayed dot data as read register data
66
.
55
indicates a flip-flop for delaying the dot data LDT of the current line by one time-period of the clock CLK and outputting the delayed dot data LDT as dot data
67
.
56
indicates an arithmetic processing unit for receiving both the dot data
67
of the current line and the read register data
66
of the preceding line and performing a prescribed picture processing.
Next, an operation is described.
FIG. 9
is a time chart showing an operation of each unit of the conventional line memory.
In a first time-period T
1
of the double clock 2CLK, a reset signal (not shown) is received in the read/write address counter
51
to initialize the read/write address counter
51
, an initial value of 38DH (H indicates that 38DH is a hexadecimal number, and 38DH is equivalent to 909 expressed by a decimal number) is set, and the initial value is output as a read/write address signal
61
. In the read/write control unit
52
, a read enable signal
62
is produced from the read/write address signal
61
which specifies the initial value of 38DH (909), the read enable signal
62
is output to the memory
50
with an address signal
63
of 38DH (909), and dot data A
1
of a first line is read out from the memory
50
. Thereafter, in a second time-period T
2
of the double clock 2CLK, the dot data A
1
is output through the read register
54
as read register data
66
. Also, the read register data
66
and dot data
67
, which is obtained by delaying dot data LDT in the flip-flop
55
by one time-period of the clock CLK, are input to the arithmetic processing unit
56
, and a desired picture processing is performed.
In the second time-period T
2
of the double clock 2CLK, a write enable signal
64
is produced from the read/write address signal
61
, the write enable signal
64
is output to the memory
50
with the address signal
63
of 38DH (909), and write register data
65
, which is obtained by delaying dot data LDT in the write register
53
by one time-period of the double clock 2CLK and denotes dot data B
1
of a second line, is written in the memory
50
. Thereafter, in a next time-period T
3
of the double clock 2CLK, a count down operation is performed in the read/write address counter
51
, a read/write address signal
61
of 38CH (908) is output from the read/write address counter
51
, and the data reading-out from the memory
50
and the data writing-in to the memory
50
are performed in the same manner as the above-described operation. In a following operation, the data reading-out and the data writing-in are alternately performed for each time-period of the clock CLK (4 fsc) while decreasing a counted value of the read/write address counter
51
one by one.
Also, when the counted value is counted down to 0H (0) in the read/write address counter
51
, the reading-out of the dot data of the first line and the writing-in of the dot data of the second line are completed, and the reading-out of the dot data of the second line and the writing-in of dot data of a third line are successively performed. Thereafter, in the same manner, the reading-out of dot data of a preceding line and the writing-in of dot data of a current line are performed one after another.
However, because the conventional line memory has the above-described configuration, in the signal processing using the line memory, it is required to perform both the reading-out of the dot data of the preceding line stored in the memory
50
and the writing-in of the dot data of the current line to the memory
50
within one processing time-period (1/(4 fsc)=about 70 ns). Therefore, it is required to set an operating speed of a random access memory (RAM) used in the memory
50
to a speed (8 fsc) double of the signal processing frequency, that is, a signal processing time-period equivalent to ½ (1/(8 fsc)=about 35 ns) of one processing time-period for the signal processing. That is, there is a problem that a RAM operable at high speed has to be used. Also, this high speed type RAM is expensive so as to heighten a cost of the memory
50
, and there is another problem that a picture processing apparatus using this high speed type RAM is expensive.
SUMMARY OF THE INVENTION
An object of the present invention is to provide, with due consideration to the problems of the conventional line memory, a line memory in which a RAM obtained at a low cost and operable at low speed is used.
The object is achieved by the provision of a line memory comprising first and second memories respectively having a memory capacity which is half of a memory capacity required to store all pieces of dot data of one line, read address producing means for producing a read address signal to be used to read out the dot data for each dot, write address producing means for producing a write address signal to be used to write the dot data for each dot, and a memory access signal producing unit for performing, for each time-period of a reading-out or a writing-in, both the production of an address signal, which specifies an address of the first memory or the second memory, and a read enable signal, which is used to alternately read out dot data of a preceding line stored in the first memory or the second memory, according to the read address signal produced by the read address producing means and the production of an address signal, which specifies an address of the second memory or the first memory, and a write enable signal, which is used to alternately write dot data of a current line stored in the second memory or the first memory, according to the write address signal produced by the write address producing means. In this line memory according to the present invention, both the reading-out of the dot data of the preceding line stored in the first memory or the second memory and the writing-in of the dot data of the current line to the second memory or the first memory are performed in the same time-period.
Therefore

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