Line for transporting charges from storage elements in a storage

Static information storage and retrieval – Systems using particular element – Semiconductive

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307238, 357 24, G11C 1140, G11C 1300

Patent

active

040670015

ABSTRACT:
A line as disclosed for transporting charges from one point to another. The substrate of semiconductive material has an electrical insulating layer arranged thereon. Upon this layer, a resistive layer is applied having electrodes at end points thereof for producing a drift field. Diffusion areas are arranged at the end points which are oppositely doped with respect to the semiconductor material situated under the conductive layer. Storage elements in a storage field are connected to the line and write/read circuits are positioned at ends of the line. Taps may be connected at intermediate points along the line to permit application of differing voltages to enhance charge shifting along the line.

REFERENCES:
patent: 3693003 (1972-09-01), Sigsbee
patent: 3760202 (1973-09-01), Kosonocky
IBM Tech. Disc. Bul., vol. 14, No. 2, July 1971, "Ramdon Access Potential Ramp Memory for Charge-Coupled Devices," by L. Heller, et al., pp. 485-486.

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