Line end shortening reduction during etch

Details Line end shortening reduction during etch Line end shortening reduction during etch

2006-09-14

2008-08-05

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Etching and coating occur in the same processing chamber

C216S041000, C438S694000, C438S723000

Reexamination Certificate

active

07407597

ABSTRACT:
A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with at least one photoresist line having a pair of sidewalls ending at a line end. A coating is placed over the photoresist line comprising at least one cycle of depositing a polymer layer over the photoresist line, wherein an amount of polymer at the line end is greater than an amount of polymer on the sidewalls, and hardening the polymer layer. Features are etched into the etch layer through the photoresist mask, wherein a line end shortening (LES) is less than or equal to 1.

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