Line decoder for memory devices

Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Decoding

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

326121, 326 80, H03K 19082

Patent

active

060182555

ABSTRACT:
The row decoder includes a predecoding stage supplied with row addresses and generating predecoding signals; and a final decoding stage, which, on the basis of the predecoding signals, drives the individual rows in the array. The predecoding stage includes a number of predecoding circuits presenting two parallel signal paths: a low-voltage path used in read mode, and a high-voltage path used in programming mode. A CMOS switch separates the two paths, is driven by high voltage via a voltage shifter in programming mode, and, being formed at predecoding level, involves no integration problems.

REFERENCES:
patent: 4642798 (1987-02-01), Rao
patent: 4694430 (1987-09-01), Rosier
patent: 4791612 (1988-12-01), Yoshida
patent: 4893275 (1990-01-01), Tanaka et al.
patent: 5039882 (1991-08-01), Arakawa
patent: 5311479 (1994-05-01), Harada

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Line decoder for memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Line decoder for memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Line decoder for memory devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2318212

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.