Line change-over circuit and semiconductor memory using the same

Details Line change-over circuit and semiconductor memory using the same Line change-over circuit and semiconductor memory using the same

1984-08-13

1987-02-03

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Differential sensing

365200, 365189, 307468, 371 10, G11C 1140

Patent

active

046412859

ABSTRACT:
The line change-over circuit suitable for the semiconductor memory having a redundancy memory column comprises a pair of transfer gate elements provided between a first node to which a first signal to be transmitted is supplied and a pair of transmission lines, first and second switch elements. The paired transfer gate elements are controlled on a switch in complementary manner each other according to a transfer signal. The first switch element is controlled on a switch according to the transfer signal, and the second switch element is controlled on a switch according to the first signal transmitted to one of the paired transmission lines. The first switch element turns one of the transmission lines to a fixed potential like ground potential when it is kept on, and the second switch element turns the other of the transmission lines to a fixed potential when it is kept on. The line change-over circuit in the above configuration is effective to prevent a floating state of the paired transmission lines.

REFERENCES:
patent: 4434479 (1984-02-01), Chen et al.

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