Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-05
2006-09-05
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S053000, C257S054000, C257S055000, C257S056000, C257S080000, C257S081000, C257S082000, C257S083000, C257S084000, C257S085000, C257S113000, C257S114000, C257S115000, C257S116000, C257S117000, C257S118000, C257S184000, C257S185000, C257S186000, C257S187000, C257S188000, C257S189000, C257S222000, C257S225000, C257S226000, C257S242000, C257S290000, C257S291000, C257S292000, C257S293000, C257S431000, C257S432000, C257S735000, C257S462000, C257SE31054, C257SE31078, C257SE31081, C257SE31082, C257SE31093, C257S
Reexamination Certificate
active
07102185
ABSTRACT:
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.
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Losee David L.
Nichols David N.
Parks Christopher
Eastman Kodak Company
Smith Zandra V.
Soward Ida M.
Watkins Peyton C.
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