Lightly-doped drain MOSFET with improved breakdown characteristi

Details Lightly-doped drain MOSFET with improved breakdown characteristi Lightly-doped drain MOSFET with improved breakdown characteristi

1991-05-06

1995-01-31

Loke, Steven Ho Ym

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257104, 257339, 257343, 257344, H01L 2976, H01L 2994, H01L 2988

Patent

active

053861361

ABSTRACT:
An LDD lateral DMOS transistor is provided in a lightly-doped epitaxial layer of a first conductivity above a substrate of the same conductivity. A highly-doped buried layer of the first conductivity is provided under the LDD lateral DMOS transistor to relieve crowding of electrical equipotential distribution beneath the silicon surface. In one embodiment, a gate plate is provided above the gate and the gate-edge of the drift region. An optional N-well provides further flexibility to shape electric fields beneath the silicon surface. The buried layer can also reduce the electric field in a LDD lateral diode and improves cathode-to-anode reversed-recovery characteristics.

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