Lightly doped drain etch method for semiconductor manufacture

Details Lightly doped drain etch method for semiconductor manufacture Lightly doped drain etch method for semiconductor manufacture

1992-01-30

1995-08-15

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 44, H01L 21306

Patent

active

054415993

ABSTRACT:
A method of manufacturing a semiconductor device includes a first etch procedure that limits the extent of damage to the silicon substrate base of the semiconductor device, and a subsequent etch procedure operative to remove damaged portions of the silicon substrate base of the device remaining after the first etch procedure.

REFERENCES:
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patent: 4687543 (1987-08-01), Bowker
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S. Wolf et al. Silicon Processing for the VLSI Era, vol. 1, Lattice Press Sunset Beach, Calif., 1986, pp. 547-551.
Connick et al., "Study of reactive-ion-etch-induced lattice damage in silicon by Ar, CF.sub.4, NF.sub.3, and CHF.sub.3 plasmas", pp. 2059-2063, J. Appl. Phys. 64(4).
Washidzu et al., "Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface", Jap. J. Appl. Physics, 1991, pp. 1045-1049, 30(5).
Yabumoto et al., "Surface Damage on Si Substrates Caused by Reactive Sputter Etching", May 1981, pp. 893-900, Japanese J. of Appl. Phys., vol. 20, No. 5.
Fonash et al., "An Overview of Dry Etching Damage and Contamination Effects", Dec. 1990, pp. 3885-3892, J. Electrochem. Soc., vol. 137, No. 12.
Shenai et al., "The Effect of Reactive Ion Etching (RIE) in CHF.sub.3 /CO.sub.2 Plasma and Successive Residual Silicon Surface Damage Removal on the Contact Characteristics of Al-nSi and Al+1% Si-nSi Contacts", 1988, pp. 179-193, ECS Proc. 88(22).

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