Lightly doped drain ballast resistor

Details Lightly doped drain ballast resistor Lightly doped drain ballast resistor

1993-09-29

1996-03-12

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257408, 257536, 257580, 257657, 437 27, 437 30, 437 40, 437913, H01L 2968, H01L 21265

Patent

active

054988926

ABSTRACT:
A field effect transistor with improved electrostatic discharge (ESD) protection has a source, a channel underlying a gate electrode and a drain. The drain includes a lightly doped ballast resistor extending across the width of the drain and separating two other drain sub-regions. One drain sub-region is located between the ballast resistor and the channel, the other drain sub-region is opposite the resistor and connected to an exterior device. The ballast resistor laterally distributes current along the width of the drain during an ESD pulse, which reduces local peak current density and reduces damage.

REFERENCES:
patent: 4276616 (1981-06-01), Hennig
patent: 4506280 (1985-03-01), Merrill
patent: 5237193 (1993-08-01), Williams et al.

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