Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2007-06-26
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S079000, C257S290000, C257S291000, C257S222000, C257S225000, C257S431000
Reexamination Certificate
active
10637672
ABSTRACT:
In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element which includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.
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Koizumi Toru
Kozuka Hiraku
Sawada Koji
Fenty Jesse A.
Richards N. Drew
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