Light modulating sensing MOSFET transistor and process for...

Details Light modulating sensing MOSFET transistor and process for... Light modulating sensing MOSFET transistor and process for...

2008-05-13

2010-12-28

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE31073, C257SE21395, C257SE21401, C438S057000, C438S069000

Reexamination Certificate

active

07859031

ABSTRACT:
A Light Modulating sensing MOSFET transistor includes: a substrate receiving light radiation, the substrate having two source and drain areas separated by a channel extending along a first direction; a gate conductive beam extending along a second direction being substantially perpendicular to the first direction, the beam being fixed at each of its two opposite ends on at least one supporting area and being located above the channel area, the gate beam being substantially opaque and flexible so as to perform progressive modulation of the light reaching the channel in accordance with its bending controlled by the difference of voltage between the gate and the bulk and causing the beam to bend and to come closer to the surface of the channel. A process for manufacturing a light Modulating sensing MOSFET transistor is also provided.

REFERENCES:
patent: 3459944 (1969-08-01), Triebwasser
patent: 2002/0047564 (2002-04-01), Ham et al.

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