Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1983-03-11
1985-05-21
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156635, 156643, 156654, 156662, 156345, 156644, 252 792, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
045184569
ABSTRACT:
A method of etching a semiconductor crystal is given. The crystal includes elements selected from one of the groups: (a) indium and phosphorus; (b) gallium and arsenic; (c) aluminum and arsenic. The method comprises the steps of placing the crystal in an aqueous solution of H.sub.3 PO.sub.4 or HCl, and while the crystal is in contact with the solution illuminating predetermined regions of the crystal with light so that etching proceeds at the illuminated predetermined regions much more rapidly than at nonilluminated regions of the crystal. The method also includes focusing the light to a small spot on the crystal and moving the spot on the crystal so that a groove is etched in the crystal.
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AT&T Bell Laboratories
Pfeifle Erwin W.
Powell William A.
Ranieri Gregory C.
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