Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2008-02-21
2009-06-23
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S098000, C257S103000, C257SE33034, C257SE33068
Reexamination Certificate
active
07550776
ABSTRACT:
In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.
REFERENCES:
patent: 6552376 (2003-04-01), Koike et al.
patent: 6744071 (2004-06-01), Sano et al.
patent: 7049635 (2006-05-01), Sano et al.
patent: 2002/0155634 (2002-10-01), D'Evelyn et al.
patent: 2002/0166502 (2002-11-01), Vaudo et al.
patent: 2003/0089906 (2003-05-01), Ueda
patent: 2003/0141506 (2003-07-01), Sano et al.
patent: 11-68157 (1999-03-01), None
patent: 2001-060720 (2001-03-01), None
patent: 2001-77423 (2001-03-01), None
patent: 2001-119104 (2001-04-01), None
patent: 2001-148544 (2001-05-01), None
patent: 2003-100705 (2003-04-01), None
patent: 2003-218470 (2003-07-01), None
patent: 2003-37286 (2008-02-01), None
patent: WO 02/19439 (2002-03-01), None
patent: WO 03-054937 (2003-07-01), None
Japanese Office Action issued in Japanese Patent Application No. JP 2004-171301 dated on Jun. 3, 2008.
D. Morita, et al. “High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure” Jpn. J. Appl. Phys. vol. 41 (2002), Part 2, No. 12B, pp. L1434-L1436.
D. Morita, et al. “Effect of Low-threading-dislocation-density GaN-Template on 365 nm UV-LED” 50th Conference of Japan Society of Applied Physics Extended Abstract, pp. 431.
Japanese Office Action for Corresponding Appl. No. 2004-171301 Dispatched Feb. 6, 2007.
Chinese Office Action issued in corresponding Chinese Patent Application No. 200410056340.2, dated May 11, 2007.
Japanese Notice of Allowance issued in Japanese Patent Application No. JP 2004-171301 dated on Oct. 21, 2008.
EP Communication dated Dec. 5, 2008, issued in EP Appln. No. 04018710.6-2222.
Daisuke Morita et al., “High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure”, XP-001162409, Jpn. J. Appl. Phys. vol. 41 (2002) pp. L1434-L14.36.
Shin-ichi Nagahama et al., “High-Power and Long-Lifetime in GaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates”, XP-000977881, Jpn J. Appl. Phys. vol. 39 (2000) pp. L647-L650.
R. Gaska et al., Stimulated Emission at 258 nm In AIN/AlGaN Quantum Wells Grown on Bulk AlN Substrates, XP008044981, Mat. Res. Soc. Symp. Proc. vol. 764, 2003, Materials Research Society, C6.9.1-C6.9.5.
McDermott Will & Emery LLP
Sumitomo Electric Industries Ltd.
Tran Minh-Loan T
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