Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2011-03-29
2011-03-29
Rosasco, Stephen (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S005000, C438S163000
Reexamination Certificate
active
07914971
ABSTRACT:
The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).
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Kim et al. A Novel Four-Mask-Count Process Architecture for TFT-LCDS SID Digest 00 : SID International Symposium Digest of Technical Papers 2000 pp. 1006-1009.
Nagai Masaharu
Ohnuma Hideto
Fish & Richardson P.C.
Jelsma Jonathan
Rosasco Stephen
Semiconductor Energy Laboratory Co,. Ltd.
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