Light-emitting semiconductor device with a built-in...

Details Light-emitting semiconductor device with a built-in... Light-emitting semiconductor device with a built-in...

2007-02-06

2007-02-06

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S081000, C257S098000, C257S099000, C257S100000, C257S104000, C257S360000

Reexamination Certificate

active

11048954

ABSTRACT:
An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.

REFERENCES:
patent: 2002/0179914 (2002-12-01), Sheu
patent: 57093591 (1982-06-01), None
patent: 10-135519 (1998-05-01), None
patent: 10-200159 (1998-07-01), None
patent: WO-01/22495 (2001-03-01), None

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