Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-04-19
1996-12-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257103, 257627, 257628, H01L 3300
Patent
active
055875939
ABSTRACT:
A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" <1120>, and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.
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Shintani et al., "X-Ray Diffraction Topography And Crystal Characterization of GaN Epitaxial Layers For Light-Emitting Diodes", J. Electrochem. Soc.: Solid-State Science and Technology, Dec. 1978, pp. 2076-2078.
Fitzl et al., "Epitaxial Growth Of GaN On {1012} Oriented Sapphire In GaCl/NH.sub.3 /He and GaCl/NH.sub.3 /H.sub.2 Systems", Crystal Research and Technology, Feb. 1980, vol. 15, No. 10, pp. 1143-1149.
Asami Shinya
Koide Norikatsu
Umezaki Junichi
Yamazaki Shiro
Mintel William
Research Development Corporation of Japan
Toyoda Gosei Co,., Ltd.
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