Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type
Patent
1997-05-21
1999-09-28
O'Shea, Sandra
Electric lamp and discharge devices
With luminescent solid or liquid material
Solid-state type
313501, 313499, 313504, H01J 162
Patent
active
059594012
ABSTRACT:
A light-emitting semiconductor device consecutively includes a sapphire substrate, an AlN buffer layer, a silicon (Si) doped n.sup.+ -layer GaN, a Si-doped n-type GaN, a zinc (Zn) and Si-doped In.sub.0.20 Ga.sub.0.80 N emission layer, a magnesium (Mg) doped p-type Al.sub.0.08 Ga.sub.0.92 N layer as a cladding layer, an Mg-doped p-type GaN layer as a first contact layer, and an Mg-doped p.sup.+ -type GaN layer as a second contact layer. The cladding layer and the first and second contact layers have a total thickness of 10 nm to 150 nm which is thinner than that of a conventional p-layers by a half to one thirtieth. The emission layer is exposed to high growth temperature for 1.3 min. to 20 min. which is shorter than that of the conventional emission layer by a half to one thirtieth. As a result, crystallinity of the emission layer is improved, because it is prevented that In of the emission layer diffuses into the cladding and the contact layers, that N of the emission layer evaporates, and that Mg of the cladding and the contact layers diffuses into the emission layer.
REFERENCES:
patent: 5650641 (1997-07-01), Sassa et al.
patent: 5700713 (1997-12-01), Yamakazi et al.
patent: 5777350 (1998-07-01), Nakamura et al.
Nakamura et al. "High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Green-Light-Emitting Diodes", J. Appl. Phys. 76 (12), Dec. 1994, pp. 8189-8191.
Nakamura et al. "Candela-class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting Diodes", Appl. Phys. Lett. 64 (13), Mar. 1994, pp. 1687-1689.
Nakamura et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes, Jpn. J. Appl. Phys., vol. 34, Part 2, No. 10B, (1995) pp. 1332-1335.
Asami Shinya
Koike Masayoshi
O'shea Sandra
Smith Michael J.
Toyoda Gosei Co,., Ltd.
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